Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-03-09
2010-11-09
Luu, Chuog A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S153000, C438S199000, C438S151000
Reexamination Certificate
active
07829397
ABSTRACT:
A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020atoms/cm3and 1025atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.
REFERENCES:
patent: 3874919 (1975-04-01), Lehman
patent: 5888855 (1999-03-01), Nagahisa et al.
patent: 6890803 (2005-05-01), Lin et al.
patent: 2002/0117719 (2002-08-01), Ando et al.
patent: 2006/0240602 (2006-10-01), Cabarrocas et al.
patent: 2009/0137087 (2009-05-01), Yamazaki et al.
patent: H05-283693 (1993-10-01), None
patent: H08-228011 (1996-09-01), None
patent: H08-321618 (1996-12-01), None
English language translation of abstract of H05-283693.
English language translation of abstract of H08-228011.
English language translation of abstract of H08-321618.
Chen Chih-Hsien
Huang Kun-Fu
Lin Han-Tu
Peng Ya-Hui
Tseng Yi-Ya
Au Optronics Corporation
Luu Chuog A.
Thomas Kayden Horstemeyer & Risley LLP
LandOfFree
Bottom-gate thin film transistor and method of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bottom-gate thin film transistor and method of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bottom-gate thin film transistor and method of fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4237637