Bottom electrode structure for dielectric capacitors

Details Bottom electrode structure for dielectric capacitors Bottom electrode structure for dielectric capacitors

1995-04-26

1998-01-13

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257753, H01L 2348

Patent

active

057083029

ABSTRACT:
An integrated circuit capacitor (20) includes a bottom electrode structure (24) having an adhesion metal portion (34), a noble metal portion (36), and a second noble metal layer (40). A process of manufacture includes annealing the adhesion metal portion (34) and the noble metal portion (36) prior to the deposition of second noble metal layer (40) for purposes of forming barrier region (38). The electrode (24) preferably contacts metal oxide layer (26), which is made of a perovskite or perovskite-like layered superlattice material. A temporary capping layer (59) is formed and removed in manufacture, which serves to increase polarization potential from the device by at least 40%.

REFERENCES:
patent: 4300149 (1981-11-01), Howard et al.
patent: 5046043 (1991-09-01), Miller et al.
Scott et al., "Integrated Ferroelectrics," Condensed Matter News, vol. 1, No. 3, p. 66 1992.
Smolenskii et al., "Ferroelectrics of the Oxygen-Octahedral Type with Layered Structure," Soviet Physics--Solid State, v. 3, N. 3, Sep. 1961, 651.

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