Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-17
2010-11-09
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S333000, C257S341000, C257S492000, C257SE29261, C257SE29258
Reexamination Certificate
active
07829947
ABSTRACT:
Lateral DMOS devices having improved drain contact structures and methods for making the devices are disclosed. A semiconductor device comprises a semiconductor substrate; an epitaxial layer on top of the substrate; a drift region at a top surface of the epitaxial layer; a source region at a top surface of the epitaxial layer; a channel region between the source and drift regions; a gate positioned over a gate dielectric on top of the channel region; and a drain contact trench that electrically connects the drift layer and substrate. The contact trench includes a trench formed vertically from the drift region, through the epitaxial layer to the substrate and filled with an electrically conductive drain plug; electrically insulating spacers along sidewalls of the trench; and an electrically conductive drain strap on top of the drain contact trench that electrically connects the drain contact trench to the drift region.
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U.S. Appl. No. 12/981,485, filed Sep. 27, 2010.
Alpha & Omega Semiconductor Incorporated
Isenberg Joshua D.
JDI Patent
Jung Michael
Richards N Drew
LandOfFree
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