Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257SE21665
Reexamination Certificate
active
11215276
ABSTRACT:
A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum. A method for its formation is also described.
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Co-pending U..S. Patent App. HT-04-048A, filed Mar. 15, 2005, U.S. Appl. No. 11/080,868 and HT-04-048B, filed Mar. 15, 2005, U.S. Appl. No. 11/080,860, both assigned to the same assignee as the present invention, Mar. 15, 2005.
Cao Wei
Chien Chen-Jung
Hong Liubo
Horng Cheng
Tong Ruying
Ackerman Stephen B.
Hoang Quoc
Magic Technologies, Inc.
Saile Ackerman LLC
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