Bottle-shaped trench capacitor with epi buried layer

Details Bottle-shaped trench capacitor with epi buried layer Bottle-shaped trench capacitor with epi buried layer

1998-06-26

2000-01-25

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257309, H01L 27108, H01L 2976, H01L 2994

Patent

active

060181745

ABSTRACT:
A bottle-shaped trench capacitor having an expanded lower trench portion with an epi layer therein. The epi layer serves as the buried plate of the trench capacitor. A diffusion region surrounds the expanded lower trench portion to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation.

REFERENCES:
patent: 5629226 (1997-05-01), Ohtsuki
patent: 5731226 (1998-03-01), Lin et al.

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