Boron out-diffused surface strap process

Details Boron out-diffused surface strap process Boron out-diffused surface strap process

1991-11-22

1993-02-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437156, 437190, 437200, H01L 2144

Patent

active

051852942

ABSTRACT:
The invention provides a method for electrically connecting a polysilicon-filled trench to a diffusion region in a semiconductor device, wherein the trench and diffusion region are separated by a dielectric. The method provides for formation of a strap or bridge contact by utilizing a diffusion barrier layer which prevents diffusion into an overlying polysilicon layer when a subsequent boron out-diffusion step is performed. Selective etching is then utilized to remove the polysilicon layer where no boron has diffused, leaving a polysilicon strap connecting the trench and diffusion region.

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