Boron-doped SIC copper diffusion barrier films

Details Boron-doped SIC copper diffusion barrier films Boron-doped SIC copper diffusion barrier films

2006-03-08

2008-09-02

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C257SE21576, C257SE21584, C438S643000, C438S653000, C438S687000, C438S627000

Reexamination Certificate

active

07420275

ABSTRACT:
Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m2, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.

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