1989-05-25
1990-07-17
Munson, Gene M.
357 41, H01L 2702
Patent
active
049424475
ABSTRACT:
A borderless master slice semiconductor device is disclosed which comprises a plurality of first conduction type well regions arranged in a matrix type on the whole face of a second conduction type wafer; a plurality of second conduction type MOS transistor groups; a plurality of first conduction type diffusion regions arranged alterntely with the said second conduction type MOS transistor groups on the same row; a plurality of first conduction type MOS transistor groups arranged in a row direction facing opposingly with said second conduction type MOS transistor groups; and a plurality of second conduction type diffusion regions arranged alternately with said first conduction type MOS transistor groups on the same row. The device of the present invention thus constituted will bring the result that the master chip can be designed arbitrarily upon to the optimum size correspondingly with customer's order and that the production process can be singularized and the product control can be simplified.
REFERENCES:
patent: 4644382 (1987-02-01), Charransol et al.
patent: 4682202 (1987-07-01), Tanizawa
patent: 4724531 (1988-02-01), Angleton et al.
patent: 4766475 (1988-08-01), Kawashima
patent: 4771327 (1988-09-01), Usui
Choi Byoung-jin
Oh Heung-chul
Park Hak-song
Munson Gene M.
Samsung Electronics Co,. Ltd.
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