Borderless contact process for a salicide devices

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438625, 438303, 438305, 438307, H01L 214763

Patent

active

060461039

ABSTRACT:
A process for forming a borderless contact opening to an active device region, overlaid with a metal silicide layer, has been developed. The borderless contact opening is formed in a composite insulator layer, comprised with an overlying, thick ILD layer, and a thin, underlying silicon oxynitride layer. The thin silicon oxynitride layer, used as a etch stop layer, during the anisotropic RIE procedure used to form the borderless contact opening, is deposited at a temperature below 350.degree. C., to prevent agglomeration of the metal silicide layer.

REFERENCES:
patent: 5268330 (1993-12-01), Givens et al.
patent: 5514626 (1996-05-01), Hickernell et al.
patent: 5605862 (1997-02-01), Givens et al.
patent: 5652176 (1997-07-01), Maniar et al.
patent: 5677231 (1997-10-01), Maniar et al.
patent: 5698473 (1997-12-01), Ibok et al.
patent: 5757077 (1998-05-01), Chung et al.
patent: 5759867 (1998-06-01), Armacost et al.
patent: 5840624 (1998-11-01), Jang et al.
patent: 5856694 (1999-01-01), Kurichi
patent: 5863707 (1999-01-01), Lin
patent: 5872061 (1999-02-01), Lee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Borderless contact process for a salicide devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Borderless contact process for a salicide devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Borderless contact process for a salicide devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-364607

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.