Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-08-02
2000-04-04
Fahmy, Wael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438625, 438303, 438305, 438307, H01L 214763
Patent
active
060461039
ABSTRACT:
A process for forming a borderless contact opening to an active device region, overlaid with a metal silicide layer, has been developed. The borderless contact opening is formed in a composite insulator layer, comprised with an overlying, thick ILD layer, and a thin, underlying silicon oxynitride layer. The thin silicon oxynitride layer, used as a etch stop layer, during the anisotropic RIE procedure used to form the borderless contact opening, is deposited at a temperature below 350.degree. C., to prevent agglomeration of the metal silicide layer.
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Lei Ming-Dar
Thei Kong-Beng
Wuu Shou-Gwo
Ackerman Stephen B.
Fahmy Wael
Pham Long
Saile George O.
Taiwan Semiconductor Manufacturing Company
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