Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1996-03-28
1998-06-30
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 36523006, 327589, G11C 1124
Patent
active
057743924
ABSTRACT:
A ferroelectric memory array includes a word line coupled to a row of ferroelectric memory cells and a word line driver circuit for establishing a full power supply voltage on the word line. A bootstrapping circuit is coupled between the word line and a boost line for receiving a boost signal. The bootstrapping circuit includes a ferroelectric capacitor and coupling circuitry for coupling the ferroelectric capacitor between the boost line and the word line in a first operational mode such that the peak voltage on the word line is greater than the power supply voltage, and for isolating the ferroelectric capacitor from the boost line in a second operational mode. In operation, a selected word line is precharged to a full VDD power supply voltage, the ferroelectric capacitor associated with the selected word line is coupled to the boost line, the ferroelectric capacitors associated with non-selected word lines are electrically isolated from the boost line, and the boost line transitions from zero volts to VDD such that the voltage on the selected word line is boosted to a voltage greater than the VDD power supply voltage.
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Declaration of Dennis R. Wilson, Aug. 5, 1996.
Kraus William F.
Wilson Dennis R.
Hoang Huan
Meza, Esq. Peter J.
Nelms David C.
Ramtron International Corporation
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