Boosting voltage level detector for a semiconductor memory devic

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

327535, G05F 110

Patent

active

057421978

ABSTRACT:
A boosting voltage level detector for a semiconductor memory device which utilizes a boosting voltage the level of which is higher than that of a power supply voltage, which includes a pull-up portion and a pull-down portion. In a preferred embodiment, the pull-up portion includes a PMOS transistor and a first NMOS transistor connected in series between the power supply voltage and an output node, and the pull-down portion includes second and third NMOS transistors connected in series between the output node and ground. The PMOS transistor has a gate electrode which is coupled to ground, and thus functions as a current source. The second NMOS transistor has a gate electrode which is coupled to a reference voltage, and thus functions as a resistor. The gate electrodes of the first and third NMOS transistors are commonly coupled to the boosting voltage. The detector further includes an inverter circuit coupled to the output node. The voltage value of the output node rises above the trip point level of the inverter in response to the boosting voltage rising above a predetermined voltage level, and the voltage value of the output node falls below the trip point level in response to the boosting voltage falling below the predetermined voltage level.

REFERENCES:
patent: Re34290 (1993-06-01), Tobita
patent: 3914702 (1975-10-01), Gehweiler
patent: 4663584 (1987-05-01), Okada et al.
patent: 4782247 (1988-11-01), Yoshida
patent: 4794278 (1988-12-01), Vajdic
patent: 4820936 (1989-04-01), Veendrick et al.
patent: 4947064 (1990-08-01), Kim et al.
patent: 4961007 (1990-10-01), Kumanoya et al.
patent: 4967103 (1990-10-01), Dikken et al.
patent: 4983860 (1991-01-01), Yim et al.
patent: 4988894 (1991-01-01), Takiba et al.
patent: 5072134 (1991-12-01), Min
patent: 5128560 (1992-07-01), Chern et al.
patent: 5202587 (1993-04-01), McLaury
patent: 5208488 (1993-05-01), Takiba et al.
patent: 5264808 (1993-11-01), Tanaka
patent: 5270584 (1993-12-01), Koshikawa et al.
patent: 5278460 (1994-01-01), Casper
patent: 5296801 (1994-03-01), Ohtsuka et al.
patent: 5336952 (1994-08-01), Iwahashi et al.
patent: 5341045 (1994-08-01), Almulla
patent: 5355033 (1994-10-01), Jang
patent: 5367489 (1994-11-01), Park et al.
patent: 5389842 (1995-02-01), Hardee
patent: 5493244 (1996-02-01), Pathak et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Boosting voltage level detector for a semiconductor memory devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Boosting voltage level detector for a semiconductor memory devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boosting voltage level detector for a semiconductor memory devic will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2061566

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.