Boosted voltage level detector in semiconductor memory device

Details Boosted voltage level detector in semiconductor memory device Boosted voltage level detector in semiconductor memory device

2006-12-29

2009-02-10

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189090

Reexamination Certificate

active

07489578

ABSTRACT:
A voltage level of a boosted voltage is prevented from being targeted at voltage level that is too low, thereby improving a write recovery time (tWR) characteristic in a memory in a semiconductor memory device. The boosted voltage level detector includes: a voltage divider for dividing a boosted voltage and outputting a divided voltage; and a comparison unit for comparing a reference voltage corresponding to a voltage level of a target voltage with the divided voltage and outputting a level detecting signal, wherein the voltage divider includes: a first voltage drop element connected between a boosted voltage terminal and an output terminal of the voltage divider, having a negative temperature coefficient; and a second voltage drop element connected between the output terminal of the voltage divider and a ground voltage terminal, having a positive temperature coefficient.

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Korean Office Action, with English translation, issued in Korean Patent Application No. KR 10-2005-0134184, mailed Jul. 22, 2008.

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