Static information storage and retrieval – Powering
Reexamination Certificate
2006-02-07
2006-02-07
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Powering
C365S189090, C365S189110, C365S185180
Reexamination Certificate
active
06996024
ABSTRACT:
There are provided a boosted voltage generating circuit and a semiconductor memory device having the boosted voltage generating circuit which includes a booster circuit for outputting high voltage obtained by boosting the power supply voltage, a regulator circuit supplied with the high voltage, for generating voltage whose voltage value is smaller than the value of the high voltage and which is variably set to at least two values based on the high voltage at the operating time, and a equalizer circuit connected to the booster circuit and regulator circuit, for short-circuiting an output node of the booster circuit and an output node of the regulator circuit in response to a first control signal, wherein the operative period of the regulator circuit and the short-circuiting operation period of the equalizer circuit do not overlap each other.
REFERENCES:
patent: 5333122 (1994-07-01), Ninomiya
patent: 5356499 (1994-10-01), Decker et al.
patent: 5483486 (1996-01-01), Javanifard et al.
patent: 5519654 (1996-05-01), Kato et al.
patent: 5546341 (1996-08-01), Suh et al.
patent: 5726882 (1998-03-01), Miyamoto et al.
patent: 5726944 (1998-03-01), Pelly, III et al.
patent: 5982695 (1999-11-01), Mukai
patent: 6026025 (2000-02-01), Tanaka et al.
patent: 6041012 (2000-03-01), Banba et al.
patent: 6065986 (2000-05-01), Mizuta
patent: 6069518 (2000-05-01), Nakai et al.
patent: 6101118 (2000-08-01), Mulatti et al.
patent: 6101121 (2000-08-01), Rolandi
patent: 6128242 (2000-10-01), Banba et al.
patent: 6204721 (2001-03-01), Yuen et al.
patent: 6229385 (2001-05-01), Bell et al.
patent: 6285614 (2001-09-01), Mulatti et al.
patent: 6327194 (2001-12-01), Kirihara et al.
patent: 6356488 (2002-03-01), Kang
patent: 6356499 (2002-03-01), Banba et al.
patent: 6373325 (2002-04-01), Kuriyama
patent: 6434054 (2002-08-01), Shiga et al.
patent: 6434080 (2002-08-01), Shiga
patent: 6437636 (2002-08-01), Zammattio et al.
patent: 6442079 (2002-08-01), Lee et al.
patent: 6456541 (2002-09-01), Tanzawa
patent: 6487120 (2002-11-01), Tanzawa et al.
patent: 6498761 (2002-12-01), Banba et al.
patent: 6504758 (2003-01-01), Sacco et al.
patent: 6590813 (2003-07-01), Shiga
patent: 6605986 (2003-08-01), Tanzawa et al.
patent: 6614699 (2003-09-01), Tanzawa
patent: 6754107 (2004-06-01), Khouri et al.
patent: 6771547 (2004-08-01), Tanzawa et al.
patent: 6801457 (2004-10-01), Tanzawa et al.
patent: 6829194 (2004-12-01), Honda et al.
patent: 6865125 (2005-03-01), Tanzawa et al.
patent: 2002/0012273 (2002-01-01), Atsumi et al.
patent: 2003/0112056 (2003-06-01), Tanzawa et al.
patent: 2003/0151945 (2003-08-01), Tanzawa
patent: 10-11987 (1998-01-01), None
patent: 10-302492 (1998-11-01), None
European Search Report EP Appln. No. 01112062.3-2210 dtd Sep. 6, 2001.
Atsumi Shigeru
Miyaba Takeshi
Tanzawa Toru
Banner & Witcoff , Ltd.
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
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