Boosted voltage generating circuit and semiconductor memory...

Static information storage and retrieval – Powering

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189090, C365S189110, C365S185180

Reexamination Certificate

active

06996024

ABSTRACT:
There are provided a boosted voltage generating circuit and a semiconductor memory device having the boosted voltage generating circuit which includes a booster circuit for outputting high voltage obtained by boosting the power supply voltage, a regulator circuit supplied with the high voltage, for generating voltage whose voltage value is smaller than the value of the high voltage and which is variably set to at least two values based on the high voltage at the operating time, and a equalizer circuit connected to the booster circuit and regulator circuit, for short-circuiting an output node of the booster circuit and an output node of the regulator circuit in response to a first control signal, wherein the operative period of the regulator circuit and the short-circuiting operation period of the equalizer circuit do not overlap each other.

REFERENCES:
patent: 5333122 (1994-07-01), Ninomiya
patent: 5356499 (1994-10-01), Decker et al.
patent: 5483486 (1996-01-01), Javanifard et al.
patent: 5519654 (1996-05-01), Kato et al.
patent: 5546341 (1996-08-01), Suh et al.
patent: 5726882 (1998-03-01), Miyamoto et al.
patent: 5726944 (1998-03-01), Pelly, III et al.
patent: 5982695 (1999-11-01), Mukai
patent: 6026025 (2000-02-01), Tanaka et al.
patent: 6041012 (2000-03-01), Banba et al.
patent: 6065986 (2000-05-01), Mizuta
patent: 6069518 (2000-05-01), Nakai et al.
patent: 6101118 (2000-08-01), Mulatti et al.
patent: 6101121 (2000-08-01), Rolandi
patent: 6128242 (2000-10-01), Banba et al.
patent: 6204721 (2001-03-01), Yuen et al.
patent: 6229385 (2001-05-01), Bell et al.
patent: 6285614 (2001-09-01), Mulatti et al.
patent: 6327194 (2001-12-01), Kirihara et al.
patent: 6356488 (2002-03-01), Kang
patent: 6356499 (2002-03-01), Banba et al.
patent: 6373325 (2002-04-01), Kuriyama
patent: 6434054 (2002-08-01), Shiga et al.
patent: 6434080 (2002-08-01), Shiga
patent: 6437636 (2002-08-01), Zammattio et al.
patent: 6442079 (2002-08-01), Lee et al.
patent: 6456541 (2002-09-01), Tanzawa
patent: 6487120 (2002-11-01), Tanzawa et al.
patent: 6498761 (2002-12-01), Banba et al.
patent: 6504758 (2003-01-01), Sacco et al.
patent: 6590813 (2003-07-01), Shiga
patent: 6605986 (2003-08-01), Tanzawa et al.
patent: 6614699 (2003-09-01), Tanzawa
patent: 6754107 (2004-06-01), Khouri et al.
patent: 6771547 (2004-08-01), Tanzawa et al.
patent: 6801457 (2004-10-01), Tanzawa et al.
patent: 6829194 (2004-12-01), Honda et al.
patent: 6865125 (2005-03-01), Tanzawa et al.
patent: 2002/0012273 (2002-01-01), Atsumi et al.
patent: 2003/0112056 (2003-06-01), Tanzawa et al.
patent: 2003/0151945 (2003-08-01), Tanzawa
patent: 10-11987 (1998-01-01), None
patent: 10-302492 (1998-11-01), None
European Search Report EP Appln. No. 01112062.3-2210 dtd Sep. 6, 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Boosted voltage generating circuit and semiconductor memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Boosted voltage generating circuit and semiconductor memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boosted voltage generating circuit and semiconductor memory... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3694049

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.