Boosted potential generation circuit and control method

Details Boosted potential generation circuit and control method Boosted potential generation circuit and control method

2005-10-11

2005-10-11

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S149000, C327S536000

Reexamination Certificate

active

06954386

ABSTRACT:
A boosted potential generation circuit enables a high-speed operation and even miniaturization in a semiconductor memory even if external power supply voltage is reduced in the semiconductor memory. In the boosted potential generation circuit provided with a capacitor MOS transistor and a transfer MOS transistor and used for a DRAM including memory cells, a gate insulating film of the capacitor MOS transistor is thinner than that of the MOS transistor constituting the memory cell to realize a boosted potential generation circuit which has a small area and a large capacity. In this case, preferably, the gate insulating film of the transfer MOS transistor has a thickness which is not greater than that of the gate insulating film of the capacitor MOS transistor.

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Taiwanese Office Action date Aug. 30, 2004 with Translation.
Korean Office Action dated Apr. 29, 2005 with partial translation.

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