Bonding wire for semiconductor element

Details Bonding wire for semiconductor element Bonding wire for semiconductor element

1994-11-18

1996-02-13

Zimmerman, John

Stock material or miscellaneous articles

All metal or with adjacent metals

Foil or filament smaller than 6 mils

148430, 420507, 420510, C22C 502, H01L 2160

Patent

active

054910340

ABSTRACT:
This invention relates to a bonding wire (3) for connecting electrodes of a semiconductor element to outer leads (2). The bonding wire (3) consists of Cu of not less than 1 wt % but less than 5 wt %, and the balance Au and incidental impurities. The bonding wire is superior in rupture strength and bonding strength. Even if the diameter is thinned to about 10 .mu.m, high reliability may be insured for connection.

REFERENCES:
patent: 1659757 (1928-02-01), Aderer
patent: 2371671 (1945-03-01), Blount et al.
patent: 2980998 (1957-02-01), Coleman et al.
patent: 4885135 (1989-12-01), Hosoda et al.
patent: 4993622 (1991-02-01), Brook et al.
patent: 4997723 (1991-03-01), Tanaka
A. D. Merriman, "A Dictionary of Metallurgy", 1958, p. 390, no month.
Semalloy, "Clad Metals", Technical Bulletin No. CM-64, Jul. 22, 1968, pp. 1-4.
Gehman, "Gold Wire For Automated Bonding," Solid State Technology, Mar. 1980, pp. 84-91.

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