Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2011-06-28
2011-06-28
Roman, Angel (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S734000, C257S782000, C174S036000, C174S126100, C174S126400
Reexamination Certificate
active
07969021
ABSTRACT:
A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same.
REFERENCES:
patent: 4439269 (1984-03-01), Cukauskas
patent: 4935594 (1990-06-01), Groos et al.
patent: 4968867 (1990-11-01), Banzai et al.
patent: 4990411 (1991-02-01), Nakayama et al.
patent: 5097100 (1992-03-01), Jackson
patent: 5231270 (1993-07-01), Groos et al.
patent: 5232908 (1993-08-01), Shiga et al.
patent: 5364706 (1994-11-01), Toyofuku et al.
patent: 5829128 (1998-11-01), Eldridge et al.
patent: 6103025 (2000-08-01), Herklotz et al.
patent: 6110823 (2000-08-01), Eldridge et al.
patent: 6215196 (2001-04-01), Eldridge et al.
patent: 6242803 (2001-06-01), Khandros et al.
patent: 6279227 (2001-08-01), Khandros et al.
patent: 6336269 (2002-01-01), Eldridge et al.
patent: 6515218 (2003-02-01), Shimizu et al.
patent: 6515373 (2003-02-01), Barth
patent: 6525551 (2003-02-01), Beaman et al.
patent: 6610930 (2003-08-01), Seuntjens
patent: 6727579 (2004-04-01), Eldridge et al.
patent: 6778406 (2004-08-01), Eldridge et al.
patent: 6835898 (2004-12-01), Eldridge et al.
patent: 2002/0117330 (2002-08-01), Eldridge et al.
patent: 2002/0142512 (2002-10-01), Ma et al.
patent: 0 523 730 (1993-01-01), None
patent: 56-21354 (1981-02-01), None
patent: 59-155161 (1984-09-01), None
patent: 61-160958 (1986-07-01), None
patent: 62-097360 (1987-05-01), None
patent: 01-255236 (1989-10-01), None
patent: 1-259541 (1989-10-01), None
patent: 02-52118 (1990-02-01), None
patent: 03-004030 (1991-02-01), None
patent: 3-135040 (1991-06-01), None
patent: 04-079237 (1992-03-01), None
patent: 4-79246 (1992-03-01), None
patent: 05-030524 (1993-05-01), None
patent: 6-252196 (1994-09-01), None
patent: 11-186314 (1999-07-01), None
ULSI Technology, Chang and Sze (eds.), McGraw-Hill, 1996, Singapore, pp. 532-533 and 546-549.
Japanese Office Action, dated Dec. 21, 2010, from corresponding Japanese Patent Application No. 2002-527565.
Tatsumi Kohei
Terashima Shinichi
Uno Tomohiro
Kenyon & Kenyon LLP
Nippon Steel Corporation
Roman Angel
LandOfFree
Bonding wire for semiconductor device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bonding wire for semiconductor device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bonding wire for semiconductor device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2736341