Bonding structure and fabrication thereof

Details Bonding structure and fabrication thereof Bonding structure and fabrication thereof

2007-12-26

2011-10-11

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S666000, C438S687000

Reexamination Certificate

active

08034711

ABSTRACT:
A bonding structure and the method of fabricating the same are disclosed. The bonding structure of the invention includes a copper-based pad formed in an insulator layer and a protection layer substantially covering top surface of the copper-based pad. The protection layer is self-aligned formed and the material thereof is selected from a group consisting of metal nitride, copper alloy, copper compounds, and a combination thereof.

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