Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1993-03-31
1996-10-22
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257673, 257741, 257753, 257780, 257781, H01L 2358, H01L 23495, H01L 2348
Patent
active
055679811
ABSTRACT:
A bonding pad structure for use with compliant dielectric materials and a method for wire bonding is described in which a rigid layer is formed between the bonding pad and the compliant dielectric layer. The rigid layer increases the stiffness of the bonding structure such that an effective bond may be achieved by conventional ultrasonic and thermosonic bonding methods.
REFERENCES:
patent: 4017886 (1977-04-01), Tomono et al.
patent: 4743568 (1988-05-01), Wood
patent: 4842662 (1989-06-01), Jacobi
patent: 4887146 (1989-12-01), Hinode
patent: 4933305 (1990-06-01), Kikkawa
patent: 4990993 (1991-02-01), Tsurumaru
patent: 5060051 (1991-10-01), Usuda
patent: 5146312 (1992-09-01), Lim
patent: 5172212 (1992-12-01), Baba
patent: 5235212 (1993-08-01), Shimizu et al.
patent: 5256597 (1993-10-01), Gambino
patent: 5260604 (1993-11-01), Harada et al.
patent: 5288007 (1994-02-01), Interrante et al.
Bhansali Ameet S.
Chen Shou H.
Gasparek Michael J.
Jeng Kevin
Lee Ching C.
Crane Sara W.
Intel Corporation
Martin Wallace Valencia
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