Bonding pad structure and method of forming the same

Details Bonding pad structure and method of forming the same Bonding pad structure and method of forming the same

2006-12-12

2006-12-12

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S786000

Reexamination Certificate

active

07148574

ABSTRACT:
A bonding pad structure and fabrication method thereof. A bonding pad is substantially surrounded and insulated by a dielectric layer, wherein the bonding pad is formed of at least one first conductive layer having a wiring layer with a stripe layout and a first edge portion, a second conductive layer having a wire bonding portion and a second edge portion and a plurality of plugs electrically connecting the wiring layer and the wire bonding portion. A conductive structure of an array of metal plugs or a metal damascene structure is formed to connect the first edge portion and the second edge portion, thereby preventing burn out of the first edge portion during an ESD event.

REFERENCES:
patent: 5736791 (1998-04-01), Fujiki et al.
patent: 5739587 (1998-04-01), Sato
patent: 6028367 (2000-02-01), Yu
patent: 6762466 (2004-07-01), Huang et al.
patent: 2002/0135032 (2002-09-01), Kwon

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