Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-07
2006-02-07
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S614000, C438S700000, C438S720000, C257S459000
Reexamination Certificate
active
06995082
ABSTRACT:
The present invention relates to a bonding pad of a semiconductor device and a formation method thereof, and the object of the present invention is to prevent bonding defects by enlarging contact area between a bonding pad and a soldering material and to prevent moisture from penetrating into an oxide layer. The present invention provides a bonding pad of a semiconductor device comprising: a barrier metal layer formed on a structure of a semiconductor substrate; a metal wire layer formed on the barrier metal layer; a passivation metal layer formed on the metal wire layer and removed partly to expose a portion of the upper surface of the metal wire layer; an insulating layer which is formed on the passivation metal layer and has a contact hole exposing the metal wire layer via the portion that the passivation metal layer is removed; and an adhesive metal layer formed on the inner surface of the contact hole.
REFERENCES:
patent: 5430329 (1995-07-01), Harada et al.
patent: 5923072 (1999-07-01), Wada et al.
patent: 6162652 (2000-12-01), Dass et al.
patent: 6191023 (2001-02-01), Chen
patent: 6376353 (2002-04-01), Zhou et al.
patent: 6426556 (2002-07-01), Lin
patent: 6471115 (2002-10-01), Ijuin et al.
patent: 6583039 (2003-06-01), Chen et al.
patent: 6-244237 (1994-09-01), None
Yokoyama Akihiro: Semiconductor Device and Manufacturing Method Thereof, Patent Abstracts of Japan: Filed Feb. 19, 2003; 1 Page: Publication No. 06-244237, Publication Date Feb. 9, 1994.
DongbuAnam Semiconductor Inc.
Fortney Andrew D.
Goudreau George A.
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