Bonding pad interconnection structure

Details Bonding pad interconnection structure Bonding pad interconnection structure

1985-12-16

1988-02-02

Scott, J. R.

Electricity: electrical systems and devices

Miscellaneous

357 54, 357 71, H05K 710

Patent

active

047231971

ABSTRACT:
Semiconductor devices having bonding pads formed over active regions on the device are fabricated by providing protective layers between the bonding pad and the underlying active region(s). The first protective layer is formed from a polyimide material which can absorb shock resulting from tape automated bonding of the bonding pad. The second protective layer is formed from a puncture-resistant material, such as a plasma nitride, which will prevent penetration of the bonding pad resulting from the downward force applied during tape automated bonding. The bonding pad is connected to active regions or metallization pads on the device substrate by a metal interconnect having a vertical run and a lateral run. The vertical run penetrates the protective layers as well as any passivation layers which may be present, while the lateral run provides an offset for the bonding pad. In this way, the bonding pad and the active region of the substrate will be separated by the protective layers.

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