Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-30
2010-10-05
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S459000
Reexamination Certificate
active
07807559
ABSTRACT:
A bonding pad includes multiple metal layers, insulation layers filled between the multiple metal layers, and a fixing pin coupled between the uppermost metal layer, where a bonding is performed, and the underlying metal layers. Peeling of the bonding pad can be prevented during the ball bonding by forming the fixing pin coupled to the edges of the bonding pad. The upper portion of the fixing pin is formed in a disk shape and a ball portion of the fixing pin is fixed by slits such that the peeling of the bonding pad can be further prevented.
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patent: 2008/0237849 (2008-10-01), Pratt
patent: 2009/0152727 (2009-06-01), Kim
patent: 2009/0267194 (2009-10-01), Chen
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patent: 1020010062344 (2001-07-01), None
Hynix / Semiconductor Inc.
Le Thao P.
Townsend and Townsend / and Crew LLP
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