Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-05-09
2006-05-09
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S784000, C257S786000, C257S700000, C257S701000, C257S758000, C257S702000, C257S698000, C257S734000, C257S773000, C257S780000, C257S781000, C257S737000, C257S668000, C361S767000, C361S768000, C174S252000, C174S259000, C029S846000
Reexamination Certificate
active
07042098
ABSTRACT:
An integrated circuit is packaged using a package substrate that has a bottom side with a regular array of connection points and a top side with the integrated circuit on it. Vias in the package substrate provide electrical connection between the top and bottom sides. The vias have a via capture pad to which a wire may be wire bonded so that the wires from the IC to the substrate top side directly contact the vias at their capture pads without the need for traces from a top side bond pad to a via. The via capture pad is shaped to include at least one sharp edge to improve the ability of a wirebonder with pattern recognition software to locate the capture pad and place the wire.
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Ker et al., “Design on the Low-Capacitance Bond Pad for High-Frequency I/O Circuits in CMOS Technology,”IEEE Transactions on Electron Devices, vol. 48, No. 12, Dec. 2001, pp. 2953-2956.
Harun Fuaida
Koh Liang Jen
Tan Lan Chu
Bergere Charles
Freescale Semiconductor,INC
Williams Alexander Oscar
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