Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-12-12
2006-12-12
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S795000, C438S798000
Reexamination Certificate
active
07148122
ABSTRACT:
In one embodiment, a method comprises placing a first and a second substrate into a reaction chamber, the first substrate being made of an indium antimonide material and having a first surface and the second substrate being made of a silicon or a silicon dioxide material and having a second surface; exposing the first and second surfaces to an oxygen plasma; forming a bond between the first and the second substrates by placing the first surface in contact with the second surface; and annealing the first and the second substrates to strengthen the bond.
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Kelman Maxim B.
Lei Ryan Z.
Shaheen Mohamad A.
Jr. Carl Whitehead
Rodgers Colleen E.
Schwabe Williamson & Wyatt P.C.
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