Bonding of integrated circuit chip to carrier using gold/tin eut

Details Bonding of integrated circuit chip to carrier using gold/tin eut Bonding of integrated circuit chip to carrier using gold/tin eut

1991-09-30

1992-10-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437902, H01L 2158

Patent

active

051569981

ABSTRACT:
A gallium arsenide monolithic microwave integrated circuit (MMIC) chip (12) has microelectronic devices (16,18) formed on a frontside surface (12a), and via holes (12c,12d) formed through the chip (12) from the frontside surface (12a) to the backside surface (12b). The backside surface (12b) of the chip (12) is bonded to a molybdenum carrier (14) by an eutectic gold/tin alloy (20). A barrier layer (22) including a refractory metal nitride material (22a) is sputtered onto the backside surface (12b) and into the via holes (12c,12d) of the chip (12) prior to bonding. The barrier layer (22) blocks migration of tin from the eutectic gold/tin alloy (20) through the via holes 12c,-12d) to the frontside surface (12a) of the chip (12) during the bonding operation, thereby preventing migrated tin from adversely affecting the microelectronic devices (16,18 ).

REFERENCES:
patent: 4603455 (1986-08-01), Woest et al.
patent: 4702967 (1987-10-01), Black et al.
patent: 4927505 (1990-05-01), Sharma et al.
patent: 5027189 (1991-06-01), Shannon et al.
patent: 5063177 (1991-11-01), Geller et al.

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