Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-06-30
2008-12-02
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S736000, C257S786000, C257SE23027, C257SE23025, C349S149000
Reexamination Certificate
active
07459789
ABSTRACT:
A bonding method of a flexible film is provided, which includes: positioning an anisotropic conductive film on a plurality of first signal lines formed on the flexible film to be bonded to a thin film transistor (TFT) panel; arranging the anisotropic conductive film on the TFT panel to align the first signal lines formed on the flexible film and a plurality of second signal lines formed on the TFT panel; positioning at least one portion of a protection film for protecting the second signal lines of the flexible film to be overlapped with the TFT panel; and pressing the flexible film and the TFT panel.
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Cho Won-Gu
Kim Yun-Hee
Kwok Edward C.
MacPherson Kwok & Chen & Heid LLP
Samsung Electronics Co,. Ltd.
Thai Luan
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