Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-09
2008-11-18
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21084
Reexamination Certificate
active
07452800
ABSTRACT:
A bonding technique suitable for bonding a non-metal body, such as a silicon MEMS sensor, to a metal surface, such a steel mechanical component is rapid enough to be compatible with typical manufacturing processes, and avoids any detrimental change in material properties of the metal surface arising from the bonding process. The bonding technique has many possible applications, including bonding of MEMS strain sensors to metal mechanical components. The inventive bonding technique uses inductive heating of a heat-activated bonding agent disposed between metal and non-metal objects to quickly and effectively bond the two without changing their material properties. Representative tests of silicon to steel bonding using this technique have demonstrated excellent bond strength without changing the steel's material properties. Thus, with this induction bonding approach, silicon MEMS devices can be manufacturably bonded to mechanical steel components for real time monitoring of the conditions/environment of a steel component.
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PCT patent application No. PCT/US06/44019, International Search Report mailed Sep. 25, 2007.
PCT patent application No. PCT/US06/44019, Written Opinion mailed Sep. 25, 2007.
Lin Liwei
Pisano Albert P.
Sosnowchik Brian D.
Coleman W. David
The Regents of the University of California
Weaver Austin Villeneuve & Sampson LLP
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