Bonding a metal component to a low-k dielectric material

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S782000, C438S783000

Reexamination Certificate

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06846755

ABSTRACT:
A dielectric material is strengthened by bonding a metal component to the dielectric matrix. The metal component may be a metal oxide or metal oxide precursor. The metal component may be deposited on the substrate with the dielectric material, or sol-gel chemistry may be used and the liquid solution spin-coated on a substrate.

REFERENCES:
patent: 6277765 (2001-08-01), Cheng et al.
patent: 6362091 (2002-03-01), Andideh et al.
patent: 6436822 (2002-08-01), Towle
patent: 6482754 (2002-11-01), Andideh et al.
patent: 6495474 (2002-12-01), Rafferty et al.
patent: 6699797 (2004-03-01), Morris et al.
Laughlin et al., “Using Sol-Gel Chemistry to Synthesize a Material with Properties Suited for Chemical Sensing”, Journal of Chemical Education, vol. 77, No. 1, pp. 77-79, Jan. 2000.

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