Bonded wafer structure having a buried insulation layer

Details Bonded wafer structure having a buried insulation layer Bonded wafer structure having a buried insulation layer

1992-05-15

1994-01-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257524, 257501, 257506, 257 77, H01L 2712

Patent

active

052763382

ABSTRACT:
A wafer structure and a method of making the same, upon which semiconductor devices may be formed, comprises first and second wafers. The first wafer comprises a first substrate having a thin oxide layer formed on a bottom surface thereof, the first substrate having a characteristic thermal expansion coefficient. The second wafer comprises a second substrate having an insulation layer formed on a top surface thereof, the insulation layer having a characteristic thermal expansion coefficient substantially matched with the characteristic thermal expansion coefficient of the first substrate and further having a high thermal conductivity. The second wafer further comprises a thin oxide layer formed on a top surface of the insulation layer, wherein the first thin oxide layer of the first wafer is bonded to the second thin oxide layer of the second wafer.

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No Author, "Wafer Bonding with Diamond-Like Carbon Films", Research Disclosure, No. 345, Jan. 1993.

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