Bonded wafer processing method

Details Bonded wafer processing method Bonded wafer processing method

2006-10-31

2006-10-31

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S455000, C438S459000, C438S706000, C438S745000, C438S977000

Reexamination Certificate

active

07129172

ABSTRACT:
According to one embodiment a method is disclosed. The method includes applying a photoresist layer to a first wafer, etching the first wafer, bonding the first wafer to a second wafer and thinning the first wafer; wherein an unsupported bevel portion of the first wafer is removed.

REFERENCES:
patent: 5937312 (1999-08-01), Iyer et al.
patent: 6841848 (2005-01-01), MacNamara et al.
patent: 10-335195 (1998-12-01), None

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