Bonded wafer processing

Details Bonded wafer processing Bonded wafer processing

1994-08-09

1996-05-14

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257639, H01L 2701

Patent

active

055170471

ABSTRACT:
Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.

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patent: 5442223 (1995-08-01), Fujii
Burkhardt, "Composite Silicon Dioxide-Silicon Oxynitride Insulating Layer," IBM Technical Disclosure Bulletin, vol. 13, No. 1, Jun. 1970, p. 21.
Haisma, et al., "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations", Japanese Journal Appl. Phys., vol. 28, No. 8, 1989, Japan.

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