Bonded wafer package module

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257SE25027, C257S254000, C257S531000, C257S686000, C257S777000, C333S133000, C333S187000, C333S189000, C333S191000, C438S050000, C438S052000

Reexamination Certificate

active

07863699

ABSTRACT:
Bonded wafer packages having first and second wafers bonded together forming a matrix of sealed devices, at least one of the wafers having a plurality of passive devices formed thereon, including at least one BAW resonator within each of the sealed devices, the first wafer having conductor filled through-holes forming electrical connections between the passive devices and connections assessable from outside the sealed devices, the bonded wafers being diced to form individual sealed devices. The devices may be duplexers, interstage filters or other circuits such as VCOs and RF circuits. Various embodiments are disclosed.

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