Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-01
2008-01-01
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S507000, C257SE21121, C257SE21123
Reexamination Certificate
active
11300503
ABSTRACT:
The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.
REFERENCES:
patent: 5374581 (1994-12-01), Ichikawa et al.
patent: 5670411 (1997-09-01), Yonehara et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6284629 (2001-09-01), Yokokawa et al.
patent: 6306730 (2001-10-01), Mitani et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6566233 (2003-05-01), Yokokawa et al.
patent: 6846718 (2005-01-01), Aga et al.
patent: 7052974 (2006-05-01), Mitani et al.
patent: 0 977 255 (2000-02-01), None
patent: 1 045 448 (2000-10-01), None
patent: A 5-090117 (1993-04-01), None
patent: A 2000-331899 (2000-11-01), None
Takagi, Shin-ichi et al. “On the Universality of Inversion Layer Mobility in Si MOSFETs: Part II—Effects of Surface Orientation.”IEEE Transactions on Electronic Devices,vol. 41, No. 12, Dec. 1994 (pp. 2363-2368).
Hamada, Tatsufumi et al. “Thin Inter-Polyoxide Films for Flash Memories Grown at Low Temperature (400° C) by Oxygen Radicals.”IEEE Electron Device Letters.vol. 22, No. 9, Sep. 2001 (pp. 423-425).
Saito, Yugi et al. “Advantage of Radical Oxidation for Improving Reliability of Ultra-Thin Gate Oxide.”2000 Symposium On VLSI Technology Digest of Papers(pp. 176-177), date unknown.
Demizu Kiyoshi
Mitani Kiyoshi
Ohmi Tadahiro
Sugawa Shigetoshi
Yokokawa Isao
Nhu David
Oliff & Berridg,e PLC
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Bonded wafer and method of producing bonded wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bonded wafer and method of producing bonded wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bonded wafer and method of producing bonded wafer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3947877