Bonded wafer and method of manufacturing it

Details Bonded wafer and method of manufacturing it Bonded wafer and method of manufacturing it

1993-01-05

1994-08-23

Aftergut, Jeff H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156630, 156637, 156639, 156645, 156153, 156281, 437225, 437921, 437974, 148DIG12, 148DIG135, H01L 2102, H01L 21027

Patent

active

053404351

ABSTRACT:
A bonded wafer comprising a filmy bond wafer, a base wafer, and an intermediate silicon dioxide layer, wherein the periphery of the bond wafer is etched; this bonded wafer is made by: subjecting the bond wafer to an oxidation treatment to form an oxide film over it; joining the two wafers in a manner such that the oxide film-covered face of the bond wafer is put on the base wafer to thereby sandwich the oxide film between the wafers; heating the combined wafers to thereby create a bonding strength between the two wafers; grinding the exposed face of the bond; etching the periphery of the bond wafer to remove the portion which is not in contact with the base wafer; and polishing the exposed face of the bond wafer until it becomes a thin film.

REFERENCES:
patent: 4649627 (1987-03-01), Abernathey et al.
patent: 4671846 (1987-06-01), Shimbo et al.
patent: 4878957 (1989-11-01), Yamaguchi et al.
patent: 4897366 (1990-01-01), Smeltzer
patent: 4939101 (1990-07-01), Black et al.
patent: 5022745 (1991-06-01), Zayhowski et al.
patent: 5087307 (1992-02-01), Nomura et al.
patent: 5152857 (1992-10-01), Ito et al.
Lasky, J. B., "Wafer Bonding for Silicon-On-Insulator Technologies", Applied Physics Letters, vol. 48, No. 1, pp. 78-80, Jan. 1986.

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