Bonded SOI substrate, and method for manufacturing the same

Details Bonded SOI substrate, and method for manufacturing the same Bonded SOI substrate, and method for manufacturing the same

2005-05-18

2008-10-28

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S149000, C438S455000, C438S474000

Reexamination Certificate

active

07442992

ABSTRACT:
This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.

REFERENCES:
patent: 2004/0180512 (2004-09-01), Linn et al.
patent: 2006/0258063 (2006-11-01), Forbes
patent: 08-293589 (1996-11-01), None

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