Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2006-04-18
2006-04-18
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S455000, C438S407000, C438S409000
Reexamination Certificate
active
07029986
ABSTRACT:
This invention relates to a method of fabricating a bonded product comprising at least two components that are bonded together, the method comprising the steps of: a) bringing the components together; and b) heating the components; wherein at least one of the components comprises a nanomaterial and wherein steps (a) and (b) are performed in such a manner that the components are bonded together by heating at least part of the nanomaterial. The method allows the components to be welded together at lower temperatures than for prior art methods. The method also provides a more reliable form of bonding and improves the strength of the bond formed.
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Canham Leigh T
Reeves Christopher L
Nixon & Vanderhye P.C.
pSiMedia Limited
Thai Luan
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