Bond pad structures and integrated circuit chip having the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S048000, C257S773000, C257S781000, C257S784000, C257SE21522, C257SE21523, C257SE23151, C438S014000, C438S015000

Reexamination Certificate

active

08072076

ABSTRACT:
Bonding pad structures and integrated circuits having the same are provided. An exemplary embodiment of a bond pad structure comprises a bond pad layer. A passivation layer partially covers the bond pad layer from edges thereof and exposes a bonding surface, wherein the passivation layer is formed with a recess on at least one edge of the bonding surface to thereby define a probe needle contact area for probe needle testing and a wire bonding area for wire bonding on the bonding surface, and the probe needle contact area and the wire bonding area have a non-overlapping relationship.

REFERENCES:
patent: 6765228 (2004-07-01), Lin et al.
patent: 6844631 (2005-01-01), Yong et al.
patent: 7329951 (2008-02-01), Daubenspeck et al.
patent: 2005/0098903 (2005-05-01), Yong et al.
patent: 2006/0065969 (2006-03-01), Antol et al.
patent: 2007/0045865 (2007-03-01), Tang et al.

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