Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-11-02
2010-06-22
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S773000, C257SE23020, C257SE23160
Reexamination Certificate
active
07741714
ABSTRACT:
A bond pad structure for an integrated circuit chip has a stress-buffering layer between a top interconnection level metal layer and a bond pad layer to prevent damages to the bond pad structure from wafer probing and packaging impacts. The stress-buffering layer is a conductive material having a property selected from the group consisting of Young's modulus, hardness, strength and toughness greater than the top interconnection level metal layer or the bond pad layer. For improving adhesion and bonding strength, the lower portion of the stress-buffering layer may be modified as various forms of a ring, a mesh or interlocking-grid structures embedded in a passivation layer, alternatively, the stress-buffering layer may has openings filled with the bond pad layer.
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China Search Report mailed Apr. 13, 2007.
Huang Tai-Chun
Wan Wen-Kai
Yao Chih-Hsiang
Monbleau Davienne
Reames Matthew
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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