Bond pad structure for copper metallization having increased...

Details Bond pad structure for copper metallization having increased... Bond pad structure for copper metallization having increased...

2007-07-10

2007-07-10

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257S773000, C257S774000, C257SE23020

Reexamination Certificate

active

10887585

ABSTRACT:
According to one exemplary embodiment, a structure in a semiconductor die comprises a metal pad situated in an interconnect metal layer, where the metal pad comprises copper. The structure further comprises an interlayer dielectric layer situated over the metal pad. The structure further comprises a terminal via defined in the interlayer dielectric layer, where the terminal via is situated on the metal pad. The terminal via extends along only one side of the metal pad. The structure further comprises a terminal metal layer situated on the interlayer dielectric layer and in the terminal via. The structure further comprises a dielectric liner situated on the terminal metal layer, where a bond pad opening is defined in the dielectric liner, and where the bond pad opening exposes a portion of the terminal metal layer. The interlayer dielectric layer is situated between the exposed portion of the terminal metal layer and metal pad.

REFERENCES:
patent: 4060828 (1977-11-01), Satonaka
patent: 5248903 (1993-09-01), Heim
patent: 5284797 (1994-02-01), Heim
patent: 5962919 (1999-10-01), Liang et al.
patent: 6187615 (2001-02-01), Kim et al.
patent: 6222270 (2001-04-01), Lee
patent: 2001/0051426 (2001-12-01), Pozder et al.
patent: 2002/0006717 (2002-01-01), Yamaha
patent: 2003/0047794 (2003-03-01), Watanabe
patent: 2004/0142549 (2004-07-01), Yoo
patent: 2003 257969 (2003-09-01), None

Affiliated with

Also associated with

Rating

Bond pad structure for copper metallization having increased... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bond pad structure for copper metallization having increased..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bond pad structure for copper metallization having increased... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3760244