Bond pad structure comprising tungsten or tungsten compound...

Details Bond pad structure comprising tungsten or tungsten compound... Bond pad structure comprising tungsten or tungsten compound...

2005-03-15

2005-03-15

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

C428S641000, C428S651000, C428S663000, C428S665000, C428S450000, C428S698000, C257S734000, C257S740000

Reexamination Certificate

active

06866943

ABSTRACT:
A bond pad structure formed over a predetermined area of an IC substrate comprising quickly and easily removable redundancy and passivation layers upon lithography and plasma etching in a plasma containing Cl2, the bond structure comprises: a liner or lower metal layer formed on a predetermined area of the IC substrate; an aluminum-based metal layer formed on the liner layer as the last metal layer for bond purposes; a tungsten based redundancy layer formed on top of the aluminum-based last metal layer; and a passivation layer formed over the IC substrate and on the tungsten based redundancy layer.

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