Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With thin active central semiconductor portion surrounded by...
Reexamination Certificate
2006-06-09
2011-11-01
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With thin active central semiconductor portion surrounded by...
C257S629000, C257S169000, C257SE23011
Reexamination Certificate
active
08049308
ABSTRACT:
A semiconductor device having an improved contact structure. The device has a semiconductor substrate and a plurality of gate structures formed on the substrate. The device has a first interlayer dielectric overlying the gate structures. The device has a first copper interconnect layer overlying the first interlayer dielectric layer. The device also has a first low K dielectric layer overlying the first copper interconnect layer. A second copper interconnect layer is overlying the low K dielectric layer. In between the first and second copper layers is a copper ring structure enclosing an entirety of an inner region of the first low K dielectric layer. In a preferred embodiment, the copper ring structure is provided between the first copper interconnect layer and the second copper interconnect layer to maintain the inner region of the first low K dielectric layer. A bonding pad structure is overlying a region within the inner region.
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Kilpatrick Townsend and Stockton LLP
Parker Allen
Sefer A.
Semiconductor Manufacturing International (Shanghai) Corporation
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