Bond pad for a flip-chip package

Details Bond pad for a flip-chip package Bond pad for a flip-chip package

1998-09-28

2000-07-11

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

257778, 257780, H01L 2348, H01L 2352, H01L 2940

Patent

active

060877324

ABSTRACT:
A bond pad support structure is located beneath a bond pad on an integrated circuit. The bond pad support structure includes a first bond pad support layer at least partly located below the bond pad. The first bond pad support layer has a plurality of radial patterns with at least one space between the radial patterns. The radial patterns may be, for example, straight lines having approximately uniform thickness. Alternatively, the radial patterns may be triangles, each of which has an apex pointing to the center of a region below the bond pad. The radial patterns may have a plurality of different lengths. A second bond pad support layer is located on the first bond pad support layer. The second bond pad support layer fills at least a portion of the space between the radial patterns.

REFERENCES:
patent: 5053850 (1991-10-01), Baker et al.
patent: 5220199 (1993-06-01), Owada et al.
patent: 5426266 (1995-06-01), Brown et al.
patent: 5739587 (1998-04-01), Sato
patent: 5751065 (1998-05-01), Chittipeddi et al.
U.S. application No. 09/072,369 Chittipeddi et al., filed May 4, 1998.
Campbell, The Science of Engineering of Microelectronic Fabrication, Oxford University Press, pp. 444-446 (1996).
Wolf, Silicon Processing for the VLSI Era, Lattice Press, vol. 2: Process Integration, pp. 400-419 (1990).
Wolf, Silicon Processing for the VLSI Era, Lattice Press, vol. 3: The Submicron Mosfet, pp. 232-246 (1995).

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