Bond method and structure using selective application of...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity

Reexamination Certificate

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C438S106000, C438S113000, C257SE21499

Reexamination Certificate

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11152973

ABSTRACT:
A method for bonding substrate structures. The method includes providing a transparent substrate structure, the transparent substrate structure comprising a face region and an incident light region, providing a spacer structure, the spacer structure comprising a selected thickness of material, the spacer structure having a spacer face region and a spacer device region, and providing a device substrate structure, the device substrate having a device face region and a device backside region. The method further includes applying a first glue material to the spacer face region and bonding the spacer face region to the face region of the transparent substrate structure. The method also includes applying a second glue material to the spacer device region and bonding the spacer device region to the device face region.

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