Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2003-04-04
2004-06-22
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C438S153000, C438S154000, C438S199000, C438S406000, C438S928000, C257S350000, C257S351000, C257S357000, C257S358000
Reexamination Certificate
active
06753239
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to bond and etchback semiconductor-on-insulator (BESOI) semiconductor processing technology and related structures.
BACKGROUND INFORMATION
FIG. 1
(Prior Art) is a cross-sectional diagram of a conventional complementary metal oxide semiconductor (CMOS) transistor structure
1
often used in contemporary ultra large scale integration. The diagram is simplified to better illustrate the related issues. Structure
1
includes a P-channel transistor
2
having a source region
3
, a drain region
4
and a gate
5
. A channel region exists between source region
3
and drain region
4
. Source region
3
and drain region
4
extend into in an N-type well region
6
.
The structure also includes an N-channel transistor
7
having a source region
8
, a drain region
9
and a gate
10
. A channel region exists between source region
8
and drain region
9
. Source region
8
and drain region
9
extend into in a P-type well region
11
. Well regions
6
and
11
are diffused into a bulk semiconductor substrate
12
. Bulk substrate
12
in this case is monocrystalline silicon of a silicon wafer. In this example, well region
11
is reverse biased with respect to substrate
12
. Each of the wells and the substrate is provided with a contact so that the wells and substrate can be maintained at the appropriate potentials. Above the upper surface
13
(sometimes called the “face side”) of the semiconductor wafer are multiple interleaved layers of metallization and insulation (not shown). The metallization layers interconnect the various transistors to form a desired integrated circuit.
In MOS transistors such as the transistors of
FIG. 1
, switching speed is limited by the time required to charge and discharge the capacitances between device electrodes. If parasitic capacitances between the device electrodes can be reduced, then device speed can be increased. In each of the two transistors of
FIG. 1
, there exists a junction capacitance between the source region and the well region, a junction capacitance between the drain region and the well region, and a junction capacitance between the P-well region and the substrate. A process is desired that reduces these capacitances and therefore speeds transistor operation.
In addition to transistors
2
and
7
of
FIG. 1
being slowed due to the presence of parasitic junction capacitances, the performance of transistors
2
and
7
also suffers due to a resistance existing between the well contact and the channel of each transistor. Radiation such as alpha particles can be penetrate into the semiconductor material of the transistors. Each alpha particle generates electron-hole pairs along its path as it passes into the semiconductor material of the device. If, for example, the electron-hole pairs are generated in a portion of the semiconductor material in which an electric field is present (for example, due to the reverse bias of a well-to-substrate junction), then the electrons and holes may be separated by the electric field. The resulting current is then typically drawn out of the well region through the well contact. One such alpha particular may, for example, generate one million such electron hole pairs. If the current path of the resulting current passes under the channel on its way from the well-to-substrate junction to the well contact, then a momentary voltage drop will exist across the current path due to the resistance of the well under the channel. This momentary voltage may affect the threshold voltage of the transistor or otherwise affect transistor operation.
In addition to currents flowing past the channel region of a transistor due to alpha particles, the normal switching of the transistors can also cause undesirable currents to flow in the transistor structure of
FIG. 1. A
first junction capacitance exists between the well region of the N-channel transistor and the substrate. A second junction capacitance exists between the substrate and the well region of the P-channel transistor. These capacitances are oriented in series with one another. Consider the situation in which the drains of the N-channel and P-channel transistors are coupled together to that the transistors form an inverter. As the transistors switch, the voltages on the drains of the transistors change, thereby causing small local changes in the voltages in the well regions. The result is current flow in a current path formed by the series coupled capacitances. This current through the well resistance, like the current due to alpha particles, may cause momentary voltage changes as the current flows through the resistance of the well region underneath a transistor channel. Such voltage fluctuations may adversely affect transistor operation.
These and other problems exist due to resistances and junction capacitances of the structure.
Using silicon-on-insulator (SOI) processing technology, transistors can be fabricated in a thin semiconductor layer that is supported and insulated from an underlying supporting substrate. In one so-called “bond and etchback” SOI (BESOI) device architecture, an insulating layer is formed over a device wafer. Etch stops are formed into the surface of the device wafer. A supporting “handle” wafer is then bonded to the insulating layer of the device wafer, and the back side of the device wafer is thinned in a planar fashion using a thinning technique until the etch stops are reached. Chemical mechanical polishing (CMP) may be used to perform this thinning. The resulting structure is a very thin layer of the device wafer that is insulated from the underlying supporting substrate by the insulating layer. Transistors are then formed into this thin layer of the device wafer. Because the transistors do not have well regions that extend into the underlying supporting substrate, the transistors do not have the associated junction capacitances. Commonly acknowledged advantages of BESOI devices include: 1) less junction capacitance so higher speed can be achieved, 2) reduced susceptibility to problems causes by radiation such as alpha particles, and 3) better isolation between transistors and increased freedom from latchup.
Although such BESOI techniques exist, the transistors nonetheless still suffer from an amount of junction capacitance. Moreover, the resistance of the well material in the area underneath the channel is present. Current through this area can still cause voltages that have undesirable influences on transistor operation. Resistance of the transistors to single event upsets, although improved, still remains. In addition to the well contacts involving a resistance, they also occupy an amount of area on the surface SOI wafer.
An improved processing technology is desired.
SUMMARY
A supporting structure such as a silicon wafer is wafer-bonded to the upper face side of a partially processed or fully processed device wafer. The device wafer includes a field effect MOS transistor. The field effect transistor includes a well region that extends into the substrate material of the device wafer. The source region and drain region of the field effect transistor extend at least partly into the well region.
After attachment of the supporting structure, the device wafer is thinned from the back side of the device wafer until the bottom of the well region is exposed. A well contact region is then ion implanted into the exposed bottom surface of the well region and a metal electrode is formed to make contact to the well region from the back side of the device wafer. The resulting transistor structure has a reduced amount of well-to-substrate parasitic junction capacitance because the well region to substrate junction area that would have otherwise existed on the bottom of the well region has been removed. Resistance between the well contact and the channel region of the transistor is reduced because the well contact is disposed close to the channel region directly under the gate of the transistor.
In another embodiment, the substrate region of a device wafer is thinned from the back side until
Kang Donghee
Liu Justin
Wallace T. Lester
Xilinx , Inc.
Young Edel M.
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