Bomine and iodine etch process for silicon and silicides

Details Bomine and iodine etch process for silicon and silicides Bomine and iodine etch process for silicon and silicides

1998-08-14

2000-02-01

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 216 79, 438714, 438721, 438735, H01L 2100

Patent

active

06020270&

ABSTRACT:
A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.

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