Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-26
2000-04-11
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257280, 257281, 257350, H01L 21265
Patent
active
060491108
ABSTRACT:
In a body driven SOIMOSFET, a semiconductor layer extends over the insulator and comprises a first conductivity type high impurity concentration diffusion layer, a low impurity concentration region and another first conductivity type high impurity concentration diffusion layer which are in this order connected with each other. A second conductivity type high impurity concentration semiconductor layer is formed in contact with a top of the low impurity concentration region. A bottom electrode is formed within the insulation layer so that the bottom electrode is surrounded by the insulation layer. The bottom electrode is positioned under the low impurity concentration region and being separated by the insulation layer from the low impurity concentration region. It is important that the bottom electrode does not extend under the first conductivity high impurity concentration regions.
REFERENCES:
patent: 5198379 (1993-03-01), Adan
patent: 5420048 (1995-05-01), Kondo
patent: 5427962 (1995-06-01), Sasaki et al.
Fariborz Assaderaghi et al., "A Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra-Low Voltage Operation", pp. 809-813, IEEE-IEDM, 1994.
Abraham Fetsum
NEC Corporation
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