Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-27
1998-09-08
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257372, 257374, H01L 2701, H01L 2976
Patent
active
058048588
ABSTRACT:
A new method of forming a silicon-on-insulator device having a body node contact is described. Active areas are isolated from one another within a silicon-on-insulator layer. Adjacent active areas are doped with dopants of opposite polarities to form at least one n-channel active area and at least one p-channel active area. Gate electrodes are formed over each active area. The area directly underlying the gate electrode and extending downward to the insulator layer comprises the body node. Lightly doped areas are formed beneath the spacers on the sidewalls of the gate electrodes. First ions are implanted into the active areas not covered by a mask whereby source and drain regions are formed in the at least one n-channel active area and whereby a p-channel body contact region is formed within the at least one p-channel active area wherein the p-channel body contact region contacts the p-channel body node. Second ions are implanted into the active areas not covered by a mask whereby source and drain regions are formed in the at least one p-channel active area and whereby an n-channel body contact region is formed within the at least one n-channel active area wherein the n-channel body contact region contacts the n-channel body node. The semiconductor substrate is annealed to complete formation of the silicon-on-insulator device having a body node contact in the manufacture of an integrated circuit.
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Hsu Ching-Hsiang
Liang Mong-Song
Ackerman Stephen B.
Martin Wallace Valencia
Pike Rosemary L. S.
Saile George O.
Taiwan Semiconductor Manufacturing Ltd.
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