Body contacted dynamic memory

Details Body contacted dynamic memory Body contacted dynamic memory

1999-05-10

2000-08-29

Nelms, David

Static information storage and retrieval

Systems using particular element

Capacitors

365150, 36518501, 257350, G11C 1124

Patent

active

061117781

ABSTRACT:
A dynamic memory circuit in which the inherent bipolar transistor effect within a floating body transistor is utilized to store an information bit. A floating body of a storage transistor stores an information bit in the form of an electric charge. The floating body is charged and discharged via an access transistor during data write operations. The inherent bipolar transistor resident within the floating body transistor increases the effective capacitance of the floating body which acts as the storage node, and thereby enhances the magnitude of the discharge current which represents the stored information bit during read operations.

REFERENCES:
patent: 5448513 (1995-09-01), Hu et al.
patent: 5587604 (1996-12-01), Machesney et al.
patent: 5821769 (1998-10-01), Douseki
patent: 5825696 (1998-10-01), Hidaka et al.
Mandelman et al, Floating-Body Concerns for SOI Dynamic Random Access Memory (DRAM), Proceedings 1996 IEEE International SOI Conference, 136-137, Oct. 1996.
"Low-Voltage Transient Bipolar Effect Induced by Dynamic Floating-Body Chargin in PS/SOI MOSFETs"; Marion M. Pelella et al; Final Camera Ready Art, Oct. 1995.

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