Body contact structure for semiconductor device

Details Body contact structure for semiconductor device Body contact structure for semiconductor device

1997-02-25

1998-12-01

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257901, 257773, 257774, H01L 29417

Patent

active

058442855

ABSTRACT:
An improved body contact structure for a semiconductor device which is capable of forming a contact portion by using less surface area, obtaining a constant contact surface ratio between a source region and a body contact diffusion layer even when a contact is misaligned, and preventing the activation of a parasitic device, whereby it is possible to enable a stable operation of the device. The body contact structure for a semiconductor device includes a conductive substrate, first and second parallel conductive source regions, a bar-shaped conductive body contact diffusion layer formed in an extended source region and split by the extended source region into multiple portions, and cubic-shaped contact wiring metal layers formed so that each body contact diffusion layer portion is connected with a neighboring body contact diffusion layer portion and the extended source region formed between the neighboring body contact diffusion layer portions.

REFERENCES:
patent: 5185275 (1993-02-01), Prall
patent: 5563438 (1996-10-01), Tsang

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