Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-06
2005-09-06
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S353000, C257S354000, C438S152000, C438S309000
Reexamination Certificate
active
06940130
ABSTRACT:
A body contact structure utilizing an insulating structure between the body contact portion of the active area and the transistor portion of the active area is disclosed. In one embodiment, the present invention substitutes an insulator for at least a portion of the gate layer in the regions between the transistor and the body contact. In another embodiment, a portion of the gate layer is removed and replaced with an insulative layer in regions between the transistor and the body contact. In still another embodiment, the insulative structure is formed by forming multiple layers of gate dielectric between the gate and the body in regions between the transistor and the body contact. The body contact produced by these methods adds no significant gate capacitance to the gate.
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Assaderaghi Fariborz
Bryant Andres
Cottrell Peter E.
Ellis-Monaghan John J.
Gauthier Jr. Robert J.
Flynn Nathan J.
Sabo William D.
Wilson Scott R.
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